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SURFACE MOUNT SILICON PIN PHOTODIODE
QSB34
QSB34GR, QSB34ZR
PACKAGE DIMENSIONS, QSB34GR
Anode
0.177 (4.50) 0.169 (4.30) 0.067 (1.70) 0.059 (1.50) 0.157 (4.00) 0.150 (3.80) 0.035 (0.90) 0.028 (0.70) .059 (1.50) .059 (1.50) .087 (2.20)
SCHEMATIC
ANODE CATHODE
Photosensitive surface
0.007 (0.17) 0.005 (0.13)
0.016 (0.40) 0.008 (0.20)
0.157 (4.00) 0.149 (3.80)
FEATURES
* Daylight Filter * Surface Mount Packages: - QSB34GR for overmount board - QSB34ZR for undermount board * Fast PIN Photodiode * Wide Reception Angle, 120 * Large Chip Size = .014 in2 (9 mm2)
0.047 (1.20)
0.004 (0.10) 0-5 Min
0.264 (6.70) 0.240 (6.10)
NOTE: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .005 (.13) on all non-nominal dimensions unless otherwise specified.
* High Sensitivity * Low Capacitance * Available in 0.470" (12mm) width tape on 7" (178mm) diameter reel; 1,000 units per reel
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified)
Parameter Operating Temperature Storage Temperature Soldering Temperature Reverse Voltage Power Dissipation(1) (Reflow)(2,3) Symbol TOPR TSTG TSOL-F VR PD Rating -40 to +85 -40 to +85 240 for 5 sec 32 150 Unit C C C V mW
Notes: 1. Derate power dissipation linearly 2.50 mW/C above 25C. 2. Solder iron (15W max temp 260C for 5 max sec.) 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Light source is an GaAs LED which has a peak emission wavelength of 940 nm.
(c) 2004 Fairchild Semiconductor Corporation
Page 1 of 6
10/19/04
SURFACE MOUNT SILICON PIN PHOTODIODE
QSB34
QSB34GR, QSB34ZR
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C unless otherwise specified)
Parameter Reverse Voltage Dark Reverse Current Peak Sensitivity Reception Angle @ 1/2 Power Photo Current Capacitance Rise Time Fall Time Spectral Sensitivity Ee = 1.0 mW/cm2, VCE = 5 V(4) VR = 3 V VR = 10 V, RL = 50 Test Conditions IR = 0.1 mA VR = 10 V VR = 5 V Symbol VR IR(D) PK IPH C tr tf S 25 Min 32 -- 940 60 37 25 20 20 .40 -- Typ Max -- 30 Units V nA nm Degrees A pF ns ns A/W
TYPICAL PERFORMANCE CURVES
100 ISC - SHORT CIRCUIR CURRENT (A)
80
80
Relative Response - %
60
60
40
40
20
20
Ta = 25C 0 600 800 900 1000 1100 1200 1300 - Wave Length - Nanometers
VR = 5V = 940nm 0 0 0.5 1.0 1.5 Ee - IRRADIANCE (mW/cm2)
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
Fig. 2 Short Circuit Current vs. Irradiance
(c) 2004 Fairchild Semiconductor Corporation
Page 2 of 6
10/19/04
SURFACE MOUNT SILICON PIN PHOTODIODE
QSB34
QSB34GR, QSB34ZR
TYPICAL PERFORMANCE CURVES (Cont.)
80 f = 1 MHz H = 0mW/cm2 CAPACITANCE (pF) 60 1000
IR - DARK CURRENT (nA)
100
40
10
20
VR = 10 V Ee = 0mV/cm2 0 0.1 1 10 100 VR - REVERSE VOLTAGE (V) 1 20 40 60 TA -TEMPERATURE (C) 80 100
Fig. 3 Capacitance vs. Reverse Voltage
Fig. 4 Dark Current vs. Temperature
1200 Ee = 0mV/cm2 IR -DARK CURRENT (pA) RESPONSE TIME tr, ff (s) 1000 800 600 400 200 0 0 2 4 6 8 10 12 14 16 18 20
101 VR = 10V TA = 25C 100
10-1
10-2
10-3 101
102
103 LOAD RESISTANCE RL ()
104
105
VR - REVERSE VOLTAGE (V)
Fig. 5 Dark Current vs. Reverse Voltage
Fig. 6 Response Time vs. Load Resistance
(c) 2004 Fairchild Semiconductor Corporation
Page 3 of 6
10/19/04
SURFACE MOUNT SILICON PIN PHOTODIODE
QSB34
QSB34GR, QSB34ZR
PACKAGE DIMENSIONS, QSB34ZR
Anode
0.177 (4.50) 0.169 (4.30) 0.067 (1.70) 0.059 (1.50) 0.157 (4.00) 0.150 (3.80) 0.035 (0.90) 0.028 (0.70) .059 (1.50) .059 (1.50) .087 (2.20)
RECOMMENDED SOLDER SCREEN PATTERN (For Reference Only)
0.035 [0.90] 0.258 [6.55] 0.067 [1.70] 0.030 [0.75] 0.004 [.10] R TYP 0.030 [0.75]
0.008 (0.20) 0.004 (0.10)
0.264 (6.70) 0.240 (6.10) 0.043 (1.10) 0.035 (0.90) Photosensitive
RECOMMENDED IR REFLOW SOLDERING PROFILE
0.004 (0.10)
surface
1 ~ 5C/sec.
260C Max. 10sec. Max.
0-5
1 ~ 5C/sec.
0.012 (0.30) 0.047 (1.20)
Pre-heating 180 ~ 200C
60sec. Max. Above 220C
NOTE: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .005 (.13) on all non-nominal dimensions unless otherwise specified.
120sec. Max.
ORDERING INFORMATION
Option QSB34GR QSB34ZR Description Gullwing, 1000 units per reel Z-Bend reversed, 1000 units per reel
(c) 2004 Fairchild Semiconductor Corporation
Page 4 of 6
10/19/04
SURFACE MOUNT SILICON PIN PHOTODIODE
QSB34
QSB34GR, QSB34ZR
TAPE & REEL DIMENSIONS
O130.5
2.5
0 0
.5
13.21.5 16.00.2
O60.20.5
O1781.0
CATHODE
O1.50.1
2.00.05
4.00.10
1.750.10
5.50.05
12 +0.3 -0.1
9
COVER TAPE
4.200.10
O1.500.25
8.00.10
1.450.10
Unit: mm
(c) 2004 Fairchild Semiconductor Corporation
Page 5 of 6
10/19/04
6.900.10
2.5 .5 0 0
SURFACE MOUNT SILICON PIN PHOTODIODE
QSB34
QSB34GR, QSB34ZR
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
(c) 2004 Fairchild Semiconductor Corporation
Page 6 of 6
10/19/04

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